PART |
Description |
Maker |
2SK3703 |
High Output MOSFETs General-Purpose Switching Device Applications
|
SANYO[Sanyo Semicon Device]
|
2SK3706 |
High Output MOSFETs General-Purpose Switching Device Applications
|
SANYO[Sanyo Semicon Device]
|
2SK3817 |
High Output MOSFETs N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
2SK3818 |
High Output MOSFETs N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
CPH3331 |
Medium Output MOSFETs P-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
VEC2402 |
Medium Output MOSFETs N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
MCH3321 |
Medium Output MOSFETs P-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
2SJ657 |
High Output MOSFETs
|
SANYO
|
2SK3832 |
High Output MOSFETs
|
SANYO
|
2SK3704 |
High Output MOSFETs
|
SANYO
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|